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RELATION BETWEEN AMORPHIZATION AND THE FORMATION OF POINT DEFECTS DURING ION BOMBARDMENT OF GERMANIUM AND SILICON

A. I. Gerasimov, E. I. Zorin, P. V. Pavlov, D. I. Tetelbaum
1970 SovietRxiv: ru-197001.96358

This paper examines the relation between amorphization and point defect formation in germanium and silicon subjected to medium-energy ion bombardment. Using Fourier analysis of amorphized germanium films, electron diffraction after layer removal, annealing experiments, and comparison with Monte Carl…

ELECTRICAL CONDUCTIVITY OF ARTIFICIAL SEMICONDUCTING DIAMOND

L. F. Vereshchagin, O. G. Revin, V. N. Slesarev, I. N. Seifi-Khusainov, A. S. Chmykhov
1970 SovietRxiv: ru-197001.74290

This paper reports measurements of the electrical conductivity of synthetic diamond single crystals doped with aluminum and compares them with undoped crystals synthesized under similar conditions. Using a specially designed temperature-controlled contact apparatus and point-contact rectification te…

THE NATURE OF DISLOCATION LOOPS

M. M. Myshlyaev, S. S. Olevskii, G. V. Vladimirova, V. A. Likhachev
1970 SovietRxiv: ru-197001.69260

This study examines the nature of dislocation loops formed near interblock boundaries in strengthened polycrystalline aluminum after a sharp temperature decrease during creep. Using transmission electron microscopy, diffraction contrast analysis, foil tilting, and bright-field and dark-field imaging…

INVESTIGATION OF THE STRUCTURE OF BORON NITRIDE CRYSTALS BY THE METHOD OF CHEMICAL ETCHING

N. B. Filonenko, L. I. Mishina
1970 SovietRxiv: ru-197001.68815

This study examines the internal growth structure of sphalerite-type boron nitride crystals produced by phase transformation from hexagonal boron nitride. The authors used chemical etching in molten KOH followed by micromorphological analysis of the etched crystal faces to reveal defect distribution…

CALCULATION OF THE SIGNS OF STRUCTURE AMPLITUDES FROM A SECTION OF THE DOUBLED FUNCTION OF INTERATOMIC VECTORS

V. I. Simonov, A. M. Vaisberg
1970 SovietRxiv: ru-197001.61999

This paper proposes a method for estimating the signs of structure amplitudes in centrosymmetric crystal structures using a three-dimensional Hoppe section of Sayre’s doubled function of interatomic vectors. The authors derive Fourier coefficients for this section, apply the Zachariasen statistical …

EFFECT OF ORGANIC IMPURITIES

V. A. Voloshin, A. A. Galkin, Yu. M. Ivanchenko, O. M. Ignat'ev, V. Yu. Tarenkov, A. O. Khrebtov
1970 SovietRxiv: ru-197001.41130

Thin-film Al, Al2O3, organic impurity, Al tunnel junctions were studied to determine how adsorbed organic molecules affect anomalous low-voltage tunnel conductivity. Naphthalene, benzophenone, and their mixture were introduced in approximately monomolecular amounts, and the resulting conductivity an…

ON THE POSSIBLE INFLUENCE OF THE GAS CONTENT IN METALS ON THE ZONE AFFECTED BY A LASER BEAM

V. F. Brekhovskikh, N. N. Rykalin, A. A. Uglov
1970 SovietRxiv: ru-197001.40868

This paper examines how gas content, impurities, and porosity in copper influence the dimensions and character of zones produced by pulsed laser irradiation. Experiments using a neodymium glass laser compared cathode, anode, black, vacuum-remelted, as-delivered, and porous copper under melting and c…

CRYSTALLIZATION OF AMORPHOUS SILICON DIOXIDE FILMS UNDER ION BOMBARDMENT AND SUBSEQUENT ANNEALING

P. V. Pavlov, È. V. Shitova, E. I. Zorin
1970 SovietRxiv: ru-197001.22735

This study examines how ion species and irradiation dose affect the crystallization of amorphous silicon dioxide films during subsequent annealing. Films deposited from tetraethoxysilane in an argon oxygen plasma were irradiated with 50 keV argon, phosphorus, or boron ions over a range of doses, ann…

FEATURES OF THE SKELETAL CRYSTALLIZATION OF NiAsS

V. N. Apollonov, E. M. Feklichev, N. V. Timofeeva, Ya. A. Kalashnikov, V. E. Svintitskikh
1970 SovietRxiv: ru-197001.13588

This paper reports the synthesis and microscopic characterization of NiAsS formed by nickel diffusion into As-S glass at 450 to 600 degrees C and 30 to 70 kbar. Optical and X-ray analyses identify the product with the gersdorffite structure, while polished sections reveal that the crystallites are n…

ORIENTATION DEPENDENCE OF THE LINE PARAMETERS OF THE CHARACTERISTIC X-RAY SPECTRUM OF ATOMS OF ELEMENTS IN SINGLE CRYSTALS

I. B. BOROVSKII, V. I. MATYSKIN
1970 SovietRxiv: ru-197001.12956

This paper investigates the orientation dependence of characteristic X-ray spectral line parameters for vanadium atoms in a single crystal of vanadium pentoxide. Using X-ray spectrometry with the crystal as a rotatable anode, the authors measured the spectral position, maximum intensity, half-width,…

ON THE TEMPERATURE STABILITY OF SYNTHETIC MICAS

I. N. Anikin, S. V. Matveev
1970 SovietRxiv: ru-197001.12453

This study examines the high-temperature stability of synthetic fluorophlogopite and several isomorphous synthetic micas, a property for which earlier reported limits varied widely. Samples were annealed between 700 and 1300 °C for 70 to 140 hours and analyzed by continuous thermogravimetry, chemica…

ON THE STRUCTURAL IMPURITY OF TUNGSTEN AND GALLIUM IN CRYSTALS OF SYNTHETIC QUARTZ

V. S. Balitskii, M. I. Samoilovich, L. I. Tsinober
1970 SovietRxiv: ru-197001.08189

This study examines the incorporation of tungsten and gallium impurities into synthetic quartz grown from weakly acidic fluorine-containing aqueous solutions, a medium in which these elements enter more readily than in alkaline growth systems. Quartz crystals doped with tungsten or gallium were anal…

ON THE EXISTENCE OF A DIAMOND-LIKE SEMICONDUCTOR IN THE GLASSY STATE

N. A. Goryunova, L. B. Zlatkin, Yu. F. Markov, A. I. Stekhanov
1969 SovietRxiv: ru-196901.97042

This study examines whether the diamond-like semiconductor CdGeAs2 can exist in a glassy state, a possibility previously considered unlikely for tetrahedrally coordinated semiconductors. The authors compare infrared reflection spectra of crystalline and glassy CdGeAs2 over 2 to 60 micrometers at 295…

DIFFUSION IN THE Cu—Zn SYSTEM UNDER THE ACTION OF ALTERNATING DEFORMATIONS

A. V. Kulemin, A. M. Mitskevich
1969 SovietRxiv: ru-196901.71485

This paper investigates whether ultrasonic alternating deformation accelerates diffusion in the Cu-Zn system, focusing on growth of gamma and epsilon intermetallic phases around zinc inserts in copper rods. Copper specimens were subjected to longitudinal ultrasound at 18.6 kHz during isothermal hold…

Preparation of Alkali-Halide Crystalline Phosphors by Surface Treatment

A. B. Gol'denberg, S. I. Golub, E. A. Nesterovskaya
1969 SovietRxiv: ru-196901.62152

This paper investigates whether alkali halide crystal phosphors can be prepared by surface treatment rather than by activation during melt growth. Freshly cleaved KCl and NaCl crystals were treated with aqueous thallium nitrate or copper sulfate solutions, annealed, quenched, and examined by absorpt…

ON THE QUESTION OF ANOMALOUS PLASTICITY OF NEAR-SURFACE LAYERS OF SEMICONDUCTOR CRYSTALS

V. P. Alekhin, O. V. Gusev, V. I. Trefilov, M. Kh. Shorshorov
1969 SovietRxiv: ru-196901.51657

This paper examines the anomalous low-temperature plasticity of near-surface layers in diamond-lattice semiconductor crystals, especially silicon, under concentrated “soft indentation” loading through a plastic metal gasket. Using previously established stress calculations and experimental criteria …

X-RAY LUMINESCENCE OF RARE-EARTH-ELEMENT IONS IN $\mathrm{Y_3Al_5O_{12}}$ CRYSTALS

Yu. K. Voronko, B. I. Denker, V. V. Osiko, A. M. Prokhorov, M. I. Timoshechkin
1969 SovietRxiv: ru-196901.50495

This paper investigates x-ray excited luminescence of trivalent rare earth ions in yttrium aluminum garnet crystals grown by the Czochralski method, contrasting this excitation with conventional optical pumping of rare earth absorption bands. Steady x-ray excitation produced intense luminescence fro…

ABSORPTION SPECTRA OF DIAMONDS OF INTERMEDIATE TYPE

Yu. A. Klyuev, A. N. Rykov, Yu. A. Dudenkov, V. M. Zubkov
1969 SovietRxiv: ru-196901.44270

This study examines infrared and ultraviolet absorption spectra of 82 natural diamond crystals classified as intermediate type, with attention to how spectral features relate to impurity nitrogen concentration and distribution. Infrared spectra in the one phonon region separate the samples into five…

On the properties of the $p$ – $n$ junction in cadmium telluride

P. S. Kireev, L. I. Kalugina, A. V. Vanyukov
1969 SovietRxiv: ru-196901.39328

The paper reports methods for fabricating cadmium telluride p-n junctions and examines their electrical and detector properties. Junctions were produced in p-type single-crystal CdTe by indium or gallium alloying and diffusion, or by boron ion bombardment, with improved surface treatment reducing le…

HIGH-TEMPERATURE CREEP OF SILICON SINGLE CRYSTALS

M. M. Myshlyaev, V. I. Nikitenko
1969 SovietRxiv: ru-196901.31957

This study examines whether the apparent differences between creep in homeopolar crystals and metals reflect bond type or the limited observation of early creep stages. Silicon single crystals were tested in uniaxial compression along the 111 direction in argon at 900 to 1300 degrees Celsius and 2 t…

THE NATURE OF TRAPPING CENTERS IN QUARTZ GLASSES

A. V. Amosov, G. T. Petrovskiĭ, D. M. Yudin
1969 SovietRxiv: ru-196901.26660

This study investigates the nature of radiation-induced trapping centers in quartz glasses, focusing on the role of hydroxyl groups and aluminum impurities in gas-fused and synthetic vitreous silica. Using electron paramagnetic resonance and optical spectroscopy after gamma irradiation, the authors …

Crystal Structure of Tin Oxide at High Pressure

N. R. Serebryanaya, S. S. Kabalkina, L. F. Vereshchagin
1969 SovietRxiv: ru-196901.25439

This study reexamines the high-pressure polymorphism of tin monoxide using improved X-ray diffraction methods with filtered molybdenum radiation and lithium fluoride as an internal pressure marker. The results confirm a reversible first-order transition above about 15 kbar from tetragonal SnOI to an…

ON THE INFLUENCE OF ALLOYING IMPURITIES ON THE ANISOTROPY OF PLASTIC DEFORMATION OF GaAs SINGLE CRYSTALS

V. B. Osvenskii, L. P. Kholodniy, M. G. Mil'vidskii
1969 SovietRxiv: ru-196901.25153

This study examines how donor and acceptor impurities affect the anisotropy of plastic deformation in Czochralski-grown GaAs single crystals. Using three-point bending creep experiments at 400 to 700 degrees and fixed stress, the authors compare specimen orientations that preferentially generate alp…

THE INFLUENCE OF IMPURITIES ON THE OVERCOMING OF HIGH PEIERLS BARRIERS BY DISLOCATIONS

V. N. Erofeev, V. I. Nikitenko, V. B. Osvenskii
1969 SovietRxiv: ru-196901.24898

This paper examines how donor and acceptor impurities affect the motion of individual dislocations in silicon, where high Peierls barriers make dislocation mobility strongly dependent on thermally activated processes. Using etch-pit measurements of isolated dislocation half-loops in bent silicon sin…

A MODEL OF A THREE-DIMENSIONALLY MODULATED COMPLEX FOR EXPLAINING X-RAY PATTERNS WITH SATELLITES

Yu. D. Tyapkin, M. N. Georgiev, M. V. Jibuti
1969 SovietRxiv: ru-196901.07845

This paper addresses diffuse x-ray scattering with satellite maxima in aging Fe, Ni, Ti alloys, where existing one-dimensional modulation models do not adequately reproduce observed isodiffuse patterns. The authors propose and calculate a model of an equiaxed complex in which interplanar spacings ar…

ELECTRON-DIFFRACTION STUDY OF THE CRYSTALLIZATION KINETICS OF AMORPHOUS ANTIMONY FILMS

G. A. Efendiev, F. I. Aliev
1968 SovietRxiv: ru-196801.98962

This paper investigates the crystallization kinetics of amorphous antimony films, a process for which earlier methods provided limited kinetic information. Thin amorphous films were annealed isothermally at 135, 150, 180, and 200 °C and examined by kinematic electron diffraction, with crystalline ph…

SPECIAL PHOTOGRAPHIC EMULSION WITH CONTROLLED SENSITIVITY

D. M. Samoilovich, I. V. Ardashev, E. S. Barinova
1968 SovietRxiv: ru-196801.98708

This paper reports the development of a special photographic emulsion whose light sensitivity can be controlled during exposure by a pulsed electric field, with intended application to recording tracks of charged particles. The emulsion was synthesized using methods typical for nuclear photographic …

ON WHISKER CRYSTALS OF DIAMOND

B. V. Deryagin, D. V. Fedoseev, V. M. Lukyanovich, B. V. Spitsyn, V. A. Ryabov, A. V. Lavrent'ev
1968 SovietRxiv: ru-196801.94920

This paper reports experiments on the growth of diamond whisker crystals from a carbon-containing gas at subatmospheric pressures on seed diamond single crystals, addressing the problem of graphite deposition that limits earlier diamond buildup methods. Using a radiation-heating apparatus, the autho…

OSCILLATIONS OF THE CRYSTALLIZATION FRONT DURING THE GROWTH OF SILICON BY THE CZOCHRALSKI METHOD

Yu. M. Shashkov, G. M. Stepanova
1968 SovietRxiv: ru-196801.90689

This paper investigates oscillations of the visible crystallization front during silicon single-crystal growth by the Czochralski method. Using photographic and high-speed motion-picture recording on growth installations with high-frequency and resistance heating, the authors directly observed the f…

X-RAY DIFFRACTION STUDY OF STRUCTURAL FEATURES OF CRYSTALS OF CUBIC BORON NITRIDE

M. I. Sokhor, S. I. Futergendler
1968 SovietRxiv: ru-196801.76787

Single-crystal Laue X-ray diffraction was used to examine structural features of about 50 individual cubic boron nitride crystals, addressing lattice perfection, twinning, accessory phases, and defect distributions not accessible from earlier powder studies. The study found that only some visually s…

OBTAINING DENSE MODIFICATIONS OF BORON NITRIDE AT HIGH PRESSURES AND SHEAR STRESSES

L. F. Vereshchagin, E. V. Zubova, L. N. Burenkova, N. I. Revin
1968 SovietRxiv: ru-196801.64500

This paper investigates whether shear stresses can facilitate the high-pressure transformation of hexagonal boron nitride into denser phases, following evidence that shear affects polymorphic transition kinetics in other materials. Hexagonal boron nitride mixed with antimony was compressed to about …

FORMATION OF AN INTRAGRAIN DISLOCATION SUBSTRUCTURE DURING THE GROWTH OF NaCl SINGLE CRYSTALS FROM THE MELT

L. G. Èidelman
1968 SovietRxiv: ru-196801.59998

This study examines the origin of intragrain dislocation structures in NaCl single crystals grown from the melt, focusing on whether observed dislocation patterns reflect growth processes or subsequent thermal treatment. NaCl crystals grown by Czochralski and related methods, together with annealed …

ON THE TIME REQUIRED FOR ESTABLISHING THE EQUILIBRIUM CONCENTRATION OF VACANCIES

B. S. Bokshtein, S. Z. Bokshtein, A. A. Zhukhovitskii, S. T. Kishkin, L. G. Kornelyuk, Yu. S. Nechaev
1968 SovietRxiv: ru-196801.59052

The paper investigates the time required to establish equilibrium vacancy concentrations in metals under quasi-equilibrium conditions, a parameter important for high-temperature diffusion processes. A pulse heat-capacity method is used in aluminum, lead, and an aluminum-copper alloy, varying pulse d…

THE ACTION OF HIGH STATIC AND DYNAMIC PRESSURES ON ALUMINUM NITRIDE

L. F. Vereshchagin, G. A. Adadurov, O. N. Breusov, K. P. Burdina, L. N. Burenkova, A. N. Dremin, E. V. Zubova, A. I. Rogacheva
1968 SovietRxiv: ru-196801.46843

This paper investigates whether high static and dynamic pressures can transform wurtzite-type aluminum nitride into a denser, potentially harder modification. High-purity aluminum nitride was subjected to shock compression, high nonhydrostatic static pressure with shear deformation up to 400 kbar, a…

ON THE ORIENTING ACTION OF MICA ON THE GROWTH OF THIN Bi FILMS

R. N. Sheftal', Yu. F. Ogrin, V. N. Lutskii, M. I. Elinson
1968 SovietRxiv: ru-196801.46641

This study examines how strongly mica substrates orient the growth of thin bismuth films when the mica surface is separated from the deposited metal by an intermediate organic layer. Bismuth was vacuum deposited on mica coated with celluloid layers of varying thickness, on coated glass, and in a sec…

THE EFFECT OF HEATING AND PRESSURE ON SOME PHYSICAL PROPERTIES OF DIAMONDS

A. V. NIKITIN, M. I. SAMOILOVICH, G. N. BEZRUKOV,
1968 SovietRxiv: ru-196801.45963

This paper examines how heating under high pressure affects defect-related physical properties of natural and synthetic diamonds, with emphasis on nitrogen impurities and associated optical and paramagnetic centers. Natural Yakut diamonds and several synthetic diamond specimens were treated for seve…

A POSSIBLE MECHANISM FOR THE FORMATION OF COMPLEX RADIATION DEFECTS IN SILICON INTRODUCED BY ELECTRON IRRADIATION

S. M. Gorodetskii, L. B. Kreinin
1968 SovietRxiv: ru-196801.41715

The paper examines possible mechanisms by which electron irradiation produces complex radiation defects in silicon, focusing on secondary associations formed from vacancies and interstitial atoms rather than on unstable primary defects. Using the McKinley-Feshbach scattering cross section and a Kinc…

ON THE ETCHING OF FACES OF CUBIC BORON NITRIDE CRYSTALS

N. E. Filonenko, G. M. Zaretskaya, N. M. Kamentseva, L. I. Fel'dgun
1968 SovietRxiv: ru-196801.36036

This study examines etching features on faces of cubic boron nitride crystals synthesized in the Mg, B, N system under high temperature and ultrahigh pressure. Selected well faceted crystals were etched in molten sodium nitrate at 520 to 530 degrees C and examined microscopically before and after tr…

SUBSTRUCTURAL STEP TRANSITIONS AT THE INITIAL STAGES OF EPITAXIAL GROWTH OF PbTe ON NaCl

L. S. Palatnik, V. M. Kosevich, L. P. Zozulya, V. K. Sorokin
1968 SovietRxiv: ru-196801.33444

This study examines stepwise structural transitions during the initial epitaxial growth of PbTe films on NaCl substrates, a system with substantial lattice mismatch. PbTe was condensed onto heated NaCl cleavages under varied deposition rates and times, and the resulting films were analyzed by electr…

ON THE CRYSTALLIZATION OF CUBIC BORON NITRIDE

G. N. Bezrukov, V. P. Butuzov, T. P. Nikitina, L. I. Fel'dgun, N. E. Filonenko, G. V. Khatelishvili
1968 SovietRxiv: ru-196801.26353

This paper compares the crystallization behavior of cubic boron nitride and synthetic diamond produced under ultrahigh pressure and high temperature. Using microscopic examination of polished, undecomposed sinters and leached aggregates, the authors observe that diamond occurs as separate well facet…

ON THE GROWTH OF ARTIFICIAL DIAMOND CRYSTALS

Yu. A. Litvin, V. P. Butuzov
1968 SovietRxiv: ru-196801.24846

This paper examines the growth forms of artificial diamond crystals in metal carbon systems and their relationship to pressure, temperature, and solvent composition. The authors distinguish seven principal crystallographic types within the continuous cube to octahedron series and report pressure tem…

MACROSCOPIC CHARACTERISTICS OF MICROINHOMOGENEOUS SOLIDS

V. V. Bolotin, V. N. Moskalenko
1968 SovietRxiv: ru-196801.19099

This paper derives macroscopic transport and mechanical coefficients for macroscopically isotropic microinhomogeneous solids whose local properties form continuous homogeneous ergodic random fields, without assuming that the inhomogeneity is small. Using iterative solutions of the stochastic boundar…

ON THE INHOMOGENEITY OF THE COMPOSITION OF CRYSTALS OF SUBSTITUTED FERRITES

S. Sh. Gendelev, N. D. Ursulyak, N. I. Utkin
1968 SovietRxiv: ru-196801.16529

This paper examines compositional inhomogeneity in substituted ferrite crystals, focusing on yttrium gallium ferrite garnet grown from solution in a melt and manganese ferrite based crystals grown by the Verneuil method. Using X-ray microanalysis, the authors characterize zoning, sectorial variation…

ON THE KINETICS AND RELAXATION TIME OF THE PHOTOCURRENT IN APhN FILMS OF CADMIUM TELLURIDE

È. I. Adirovich, V. A. Benderskii, N. Shakirov
1968 SovietRxiv: ru-196801.12229

Transient photocurrent processes in cadmium telluride films exhibiting the anomalous photovoltaic effect are investigated in order to determine the intrinsic photocurrent relaxation time apart from circuit RC limitations. Using intense pulsed optical excitation with submicrosecond fronts and a low-c…

Crystal-Chemical Regularities in the Formation of Spectrometric Scintillators Based on Alkali Halide Crystals

L. M. Shamovskii, A. D. Shushkanov
1968 SovietRxiv: ru-196801.03327

This paper examines the crystal-chemical conditions that govern the formation of spectrometric scintillators based on alkali-halide single crystals and argues against models requiring a uniform activator distribution and ordinary recombination luminescence. The authors propose that effective scintil…

STUDY OF THE ORDERING OF INTERSTITIAL ATOMS IN SOLID SOLUTIONS OF HYDROGEN IN GROUP V METALS

V. A. Somenkov, M. G. Zemlyanov, M. E. Kost, N. A. Chernoplekov, A. A. Chertkov
1968 SovietRxiv: ru-196801.02439

Elastic neutron scattering and thermographic analysis were used to study ordering of hydrogen and deuterium atoms in hydrides and deuterides of vanadium, niobium, and tantalum with compositions close to MeX. Superstructure reflections in low-temperature neutronograms show that the light atoms are no…