Opening of the Meeting: Introductory Remarks

Unknown
Submitted 1956 | SovietRxiv: ru-195601.08672 | Translated from Russian

Abstract Generated abstract

These introductory remarks frame a meeting devoted to the physics and chemistry of dielectrics, emphasizing the rapid growth of international and Soviet research on dielectric and semiconductor materials. The speaker argues that, despite substantial progress in polarization theory, dielectric losses, and breakdown calculations, knowledge remains uneven, especially concerning electron behavior in strong fields and the interrelation of insulating material properties under complex operating conditions. The remarks identify insufficient exchange among Soviet laboratories as an obstacle and present the meeting as a means to discuss key problems, coordinate research, and strengthen scientific contacts in the field.

Full Text

OPENING OF THE MEETING

Introductory remarks by Prof. A. A. VOROB'EV

In recent years, throughout the world, there has been increased interest in the development of scientific research on dielectrics and semiconductors. Every year abroad there appear major survey works on dielectrics and semiconductors and many reports on studies of individual problems in the physics of dielectrics and semiconductors. Not long ago Whitehead’s book on the breakdown of solid dielectrics appeared. There is now a report that a book edited by Hippel has been published, devoted to the physics of dielectrics and to the practice of their application in the field of high-frequency technology. Corresponding survey works have been published in France and Germany. Fröhlich’s article represents an important theoretical stage in generalizing the behavior of electrons in a dielectric in the presence of strong electric fields. In the Soviet Union, survey works by Chuenkov and Zipperman on the breakdown of solid dielectrics have been published.

All this indicates a considerable interest in the physics of dielectrics. At present a disproportion has arisen in the relations among our scientific knowledge of various physical phenomena in dielectrics. Our physical conceptions of dielectric polarization are very detailed and make it possible reliably to outline the path for designing new dielectrics with predetermined properties. Within broad limits it is possible to vary the dielectric constant and dielectric losses in various kinds of insulating materials. There exists a detailed mathematical and physical theory of thermal breakdown of dielectrics, and a theory of electrical breakdown, which make it possible to calculate, with accuracy sufficient for practice, the value of the breakdown voltage of dielectrics and insulating structures. Alongside this, we know little about the behavior of electrons in dielectrics in strong fields. Our conceptions of the electrical breakdown of solid dielectrics are very schematic and are not confirmed sufficiently convincingly by physical experiments. The properties of insulating materials, as a rule, are not considered in mutual connection with one another; as a result, materials scientists, when creating a dielectric, for example, with a definite value of the dielectric constant, know little, and very often can say almost nothing, about other properties of the dielectric they manufacture—for example, its surface conductivity or melting temperature.

The insufficiency of knowledge of the whole complex of properties of a dielectric is a significant brake on the creation of new insulating materials. It is known that in modern electrical installations dielectrics sometimes operate under conditions of the simultaneous action of several external factors: high temperature, heavy load, a strong electric field, etc. In order to assess the suitability of the operation

dielectric under complex conditions, it is essentially necessary to know how the various properties of insulating materials are interrelated.

In the Soviet Union, intensive research work is being carried out on the physics of dielectrics, and substantial scientific achievements have been made. In many cases, those working abroad are following the paths indicated by research carried out in the Soviet Union.

Despite the intensive research work of individual groups and laboratories in the USSR, the mutual exchange of scientific information and the discussion of the most important questions of modern science concerning dielectrics from the standpoint of different laboratories are being conducted in our country quite insufficiently, which undoubtedly causes great harm to our common cause of developing the science of dielectrics.

At our meeting there is an opportunity to discuss the most important contemporary questions of the physics and chemistry of dielectrics, the problem of electrical breakdown of solid dielectrics, dielectric losses, the electrical conductivity of ionic dielectrics, and others.

The establishment of personal contact, and the exchange of scientific information and work experience, will also be useful for the further development of the physics of dielectrics in the Soviet Union.

Discussion of the most important questions of the physics of dielectrics from various points of view, represented here at this meeting by various scientists, will help us come closer to scientific truth.

Also important is the discussion of the possible and necessary coordination of scientific research on dielectrics among the institutions represented at this meeting.

Errata

Page Line Printed Should read
5 15 from top Zinderman Zingerman
9 2 from bottom breakdown voltage breakdown voltage
13 4 from top $\varepsilon_m \simeq 4 \dfrac{h}{2\pi}$ $\varepsilon \simeq 4 \dfrac{h}{2\pi}\,\omega$
24 caption under figure fig. fig. 9.
50 14 from top $$-\frac{1}{M_L^{\alpha k}}=\left\{\frac{1}{M}\right.$$ $$-\frac{1}{M_L^{\alpha k}}=\left\{\frac{1}{M_-}\right.$$
53 10 from top $$-\frac{d f^{1/2}}{d\varepsilon}$$ $$-\frac{d f^{1/2}}{d\varepsilon}$$
57 5 from top $$\left(1-\sqrt{1-\frac{1}{1.3\,\varepsilon}}\right)e^{\frac{q}{E}(\varepsilon-I)^2}$$ $$\left(1-\sqrt{1-\frac{1}{1.3\,\varepsilon}}\right)e^{\frac{q}{E}(\varepsilon-I)^2}$$
64 Equation (87) $$l_2(\varepsilon_2,\varepsilon_1)=l_1 e^{-\frac{1}{l_0}}$$ $$l_2(\varepsilon_2,\varepsilon_1)=l_1 e^{-\frac{l_1}{l_0}}$$
65 18 from bottom $I \div 2\varepsilon_p$ $I+2\varepsilon_p$
85 7 from bottom $10^{14}\cdot \dfrac{\pi\,0.52\cdot10^{-2}}{4}\cdot 10^{-}$ $10^{14}\cdot \dfrac{\pi\,0.52\cdot10^{-2}}{4}\,10^{-2}$
111 2 from top production conduction
111 8 and 10 from top activation activation
120 5 from top strength chemical strength against chemical
135 literature 6 p. … p. 113
147 11 from bottom $\varepsilon=1000$ $\varepsilon\simeq1000$
148 caption to Fig. 4 $u_{\mathrm{disch.}}\ u_{\mathrm{break.}}$ $u_{\mathrm{disch.}}/u_{\mathrm{break.}}$
204 Fig. 1 KbBr RbBr
253 caption to Fig. 6 $2-\ f=4\cdot10^3\ \mathrm{cps};\ 3-\ f=10^2\ \mathrm{cps}$ $2-\ f=4\cdot10^2\ \mathrm{cps};\ 3-\ f=10^3\ \mathrm{cps}$
273 7 from top KCJ KCl
280 caption to Fig. 4 $210^5$ $2\cdot10^5$
294 1 from bottom from 10 from $10^{-4}$ at $f=2\cdot10^7$ to $6\cdot10$
282 table table 2
324 3 from top p. 269 p. 251
336 16 from bottom [3,4] [3]
337 10 from top [5] [4]
337 4 from bottom [6] [5]
337 1 from bottom [7] —
338 2 from top [8] [6]
338 4 and 5 from top [9,10] [7,8]
339 8 from bottom [11,12] [9,10]
340 14 from top [13] [11]
347 23 from bottom [14] [12]
347 3,4 from bottom [15] —
348 17 from bottom [16] [13]
389 4 from top $\psi_\sigma[M]\,x=\mathrm{Const}$ $\psi_\sigma[M]_x=\mathrm{Const}$
451 1 from bottom mechanical technical

Submission history

Opening of the Meeting: Introductory Remarks