Physicochemical Properties of Solid Solutions and Molecular Concentration

P. A. SAVINTSEV
Submitted 1958 | SovietRxiv: ru-195801.08846 | Translated from Russian

Abstract Generated abstract

This paper examines whether molecular concentration, defined from density and molecular weight, can serve as a lattice-related parameter for correlating the physicochemical properties of solid solutions and alloys. Using published data for alkali-halide crystals, oxide solid solutions, and metallic alloys, it compares molecular concentration, or the sum of the molecular concentrations of matrix and impurity components, with electrical strength, dielectric loss, dielectric coefficient, lattice constant, resistivity change, thermal expansion, hardness, and static lattice distortion. The comparisons suggest that higher molecular concentration is generally associated with greater electrical strength and hardness, lower dielectric losses and thermal expansion, smaller lattice constants, and reduced static distortions, although exceptions are noted for some impurity classes.

Full Text

PHYSICOCHEMICAL PROPERTIES OF SOLID SOLUTIONS AND MOLECULAR CONCENTRATION

P. A. SAVINTSEV

(Presented by Professor Doctor A. A. Vorob’ev)

Many physical properties of ionic dielectrics depend on the crystalline structure of the substance, on the interaction and arrangement of the particles forming the crystal lattice. It has been shown [1] that the electrical strength of crystals depends on the energy of the crystal lattice and on the liberation energy of the most weakly bound electrons. For the electrical breakdown of solid dielectrics, two energy processes are of great importance: the liberation of electrons and the destruction of the lattice. The liberation energy of electrons is of the order of magnitude of the lattice energy. The energy of the electric field is transferred to the lattice and is expended on separating it into ions in the breakdown channel. Therefore it is reasonable to seek a connection between the electrical strength of dielectrics and quantities characterizing the crystal lattice.

Dielectric losses are connected with the motion of ions in dielectrics, with their ionic structure [1]. Dielectric losses increase as the binding energy of ions in the lattice decreases. Ceramic materials with small dielectric losses can be obtained by using compositions with a higher binding energy between particles.

N. P. Bogoroditskii [2] indicates that in ceramics the ionic relaxation losses caused by displacements of ions under the influence of an electric field deserve the greatest attention. The losses depend on the structure of the material, on the character of the packing of ions in the lattice. This gives grounds for seeking a connection between dielectric losses and quantities characterizing the crystal lattice.

B. M. Rovinskii [3] points to the dependence of the mechanical properties of crystals on their atomic structure.

N. N. Sirota [4], discussing the question of the connection between the interaction energy of components and the elastic constants of solid solutions and chemical compounds, comes to the conclusion that with an increase in the interaction energy the elastic modulus of solid solutions and chemical compounds will deviate from the additive value in the direction of increase, and, conversely, with a decrease in the interaction energy between the components one should expect the value of Young’s modulus to deviate from the additive value in the direction of decrease.

The change in the electrical resistance and the temperature coefficient of resistance of crystals when impurities are introduced into them

is explained [4] by a change in the interaction between the particles forming the crystal lattice.

With an increase in the energy of interaction between atoms, the heat of sublimation and the characteristic vibration frequency increase. Grüneisen [4] established a relation between the characteristic temperature and the coefficient of linear expansion, and the change of the latter with temperature. When the specific volume of a crystal changes, its internal energy changes [4].

Lindemann [5] found a relation between the melting temperature \(T_s\), the characteristic temperature \(\Theta\), the molecular volume \(v\), and the atomic weight of the crystal \(A\) in the form:

\[ \Theta = \frac{137}{v^3}\sqrt{\frac{T_s}{A}}. \]

A quantity proportional to the energy of the crystal lattice [6] and characterizing interatomic interactions is the molecular concentration

\[ \alpha=\frac{D}{M}10^3, \]

where \(D\) is the density of the crystal, and \(M\) is the molecular weight of the substance; \(\alpha\) is measured in \(\mathrm{cm}^{-3}\,\mathrm{mol}\).

The relation of the molecular concentration to certain electrical and mechanical properties of crystals has been shown [6]. Let us determine whether there is a relation between \(\alpha\) and the properties of solid solutions. In this case the molecular weight \(M=P_1M_1+P_2M_2\), where \(P_1\) and \(P_2\) are the molecular percentages of the alloy components, and \(M_1\) and \(M_2\) are the molecular weights of the substances entering into the composition of the solid solution.

A comparison of the electric strength \(E_{\mathrm{pr}}\) of some alkali-halide crystals containing impurities with the value of \(\alpha\) is shown in Table 1, from which it follows that \(E_{\mathrm{pr}}\) increases as the molecular concentration \(\alpha\) increases. The values of the electric strength are taken from works [7, 8, 9].

The change in the electric strength of solid solutions of KCl in KBr and KJ in KBr as a function of composition is shown in Fig. 1, from which it is seen that the KJ impurity lowers the electric strength of the KBr crystal more significantly than the KCl impurity. At the same time, it is necessary to note that \(\alpha\) of KCl alloys in KBr is higher than \(\alpha\) of KJ alloys in KBr, if the comparison is made at equal amounts of impurity. It follows from this that alloys with a larger value of \(\alpha\) possess greater electric strength.

Fig. 1

Table 2 compares the values of the tangent of the dielectric-loss angle [10, 11] of crystals at a frequency of \(10^6\) Hz and room temperature with the molecular concentration \(\alpha\). From Table 2 it is seen that the dielectric losses increase as \(\alpha\) decreases. The change in the tangent of the dielectric-loss angle of solid solutions of KCl in KBr

and KI in KBr as a function of composition is shown in Fig. 2, from which it follows that the dielectric losses of the KBr crystal are increased considerably more by a KI impurity than by a KCl impurity. We have already said that \(\alpha\) of KCl alloys in KBr is higher than \(\alpha\) of KI alloys in KBr at identical impurity percentages (KCl or KI). Thus, alloys with a larger value of \(\alpha\) have smaller dielectric losses.

Table 1

Comparison of the electric strength \(E_{\text{br}}\) of alkali-halide crystals containing impurities with molecular concentration

Crystals Impurities mol % of impurity \(\alpha\), \(\text{cm}^{-3}\,\text{mol}\) \(E_{\text{br}}\), MV/cm
KBr KCl 20 23.5 1.0
KBr KI 20 21.1 0.65
KI KCl 10 19.5 0.96
KI NaI 10 19.3 0.88
KI KBr 10 19.1 0.75
NaCl NaBr 10 36.5 1.3
NaCl KCl 10 35.7 1.1
KCl NaCl 10 27.0 1.2
KCl KBr 10 25.0 1.1
KCl KI 10 24.5 0.85

Comparison of the dielectric coefficient (at a frequency of \(10^6\) Hz) of solid solutions of MgO in ZrO\(_2\) and CaO in ZrO\(_2\) [10] with molecular concentration is shown in Table 3, from which it follows that in crystals with impurities the dielectric coefficient increases with increasing \(\alpha\).

Fig. 2

A comparison of the lattice constant \(a_0\) [8] of solid solutions with the value \(\alpha\) is given in Table 4, from which it is seen that \(a_0\) decreases with increasing \(\alpha\).

Table 2

Comparison of the dielectric-loss tangent of ionic crystals
at a frequency of \(10^6\) Hz and room temperature with the molecular concentration

Crystals Impurities % impurity \(\operatorname{tg}\delta \cdot 10^4\) \(\alpha\ \mathrm{cm}^{-3}\ \mathrm{mol}\)
\(\mathrm{ZrO_2}\) \(\mathrm{TiO_2}\) 10 4 53,9
\(\mathrm{ZrO_2}\) \(\mathrm{SiO_2}\) 10 35 51,0
\(\mathrm{TiO_2}\) \(\mathrm{ZrO_2}\) 10 4 53,5
\(\mathrm{TiO_2}\) \(\mathrm{SiO_2}\) 10 20 50,4
\(\mathrm{ZrO_2}\) \(\mathrm{MgO}\) 10 25 57,0
\(\mathrm{ZrO_2}\) \(\mathrm{CaO}\) 10 50 55,0
\(\mathrm{TiO_2}\) \(\mathrm{Al_2O_3}\) 0,7 0,20 53,78
\(\mathrm{TiO_2}\) \(\mathrm{Fe_2O_3}\) 0,7 0,24 53,72
\(\mathrm{KBr}\) \(\mathrm{KCl}\) 20 1,3 23,5
\(\mathrm{KBr}\) \(\mathrm{KJ}\) 20 3,1 21,9

Table 3

Comparison of the dielectric coefficient \(\varepsilon\) of solid solutions
with molecular concentration

Crystal Impurity % impurity \(\alpha\ \mathrm{cm}^{-3}\ \mathrm{mol}\) \(\varepsilon\)
\(\mathrm{ZrO_2}\) \(\mathrm{MgO}\) 10 57 24
\(\mathrm{ZrO_2}\) \(\mathrm{CaO}\) 10 55 22—23

Table 4

Comparison of the lattice constant of alloys
with molecular concentration

Crystal Impurity % impurity \(a_0\) \(\alpha\ \mathrm{cm}^{-3}\ \mathrm{mol}\)
\(\mathrm{KCl}\) \(\mathrm{KBr}\) 10 6,3 25,0
\(\mathrm{KCl}\) \(\mathrm{KJ}\) 10 6,5 24,5
\(\mathrm{KBr}\) \(\mathrm{KCl}\) 30 6,4 23,2
\(\mathrm{KBr}\) \(\mathrm{NaBr}\) 30 6,1 23,7
\(\mathrm{NaBr}\) \(\mathrm{NaCl}\) 20 5,9 31,9
\(\mathrm{NaBr}\) \(\mathrm{KBr}\) 20 6,0 28,4
\(\mathrm{ZrO_2}\) \(\mathrm{MgO}\) 10 4,9 57
\(\mathrm{ZrO_2}\) \(\mathrm{CaO}\) 10 5,1 55

In some cases, for estimating the properties of alloys one may use the quantity \(\alpha_1 + \alpha_2\), where \(\alpha_1\) is the molecular concentration of the principal component and \(\alpha_2\) is the molecular concentration of the substance constituting the impurity. It is convenient to use the quantity \(\alpha_1 + \alpha_2\) when impurities are introduced successively into a given crystal in equal quanti-

cases; or when it is necessary to compare the course of curves indicating changes in the properties of crystals caused by different impurities.

In Table 5, \(\alpha_1+\alpha_2\) is compared with the quantity \(\Delta\rho/C\), characterizing the change in the electrical resistance of gold, silver, and copper caused by one atomic percent of impurity. In Table 5 the impurities are grouped according to the type of crystal lattice. In addition, cases are distinguished in which \(\alpha_1>\alpha_2\) and in which \(\alpha_1<\alpha_2\). The values of \(\Delta\rho/C\), expressed in

\[ \frac{\text{ohm}\cdot\text{cm}\cdot 10^{-6}}{\text{at}\%}, \]

are taken from [12, 13].

It is seen from Table 5 that, for all impurities except impurities with a simple cubic lattice, an increase in \(\Delta\rho/C\) is observed with increasing \(\alpha_1+\alpha_2\).

Table 6 shows a comparison of the coefficient of linear expansion in alloys of copper and gold with the quantity \(\alpha_1+\alpha_2\). The values of \(b\) are taken from [14, 15]. It is seen from Table 6 that, as \(\alpha_1+\alpha_2\) increases, the coefficient \(b\) decreases.

Table 5

Comparison of the change in electrical resistance upon introduction of one atomic percent of impurity \(\Delta\rho/C\) with the quantity \(\alpha_1+\alpha_2\)

Impurities Type of impurity lattice \(\Delta\rho/C\) Au \(\alpha_1+\alpha_2\), \(\text{cm}^{-3}\cdot\text{mol}\) Au, \(\alpha_1>\alpha_2\) \(\alpha_1+\alpha_2\), \(\text{cm}^{-3}\cdot\text{mol}\) Au, \(\alpha_1<\alpha_2\) \(\Delta\rho/C\) Ag \(\alpha_1+\alpha_2\), \(\text{cm}^{-3}\cdot\text{mol}\) Ag, \(\alpha_1>\alpha_2\) \(\alpha_1+\alpha_2\), \(\text{cm}^{-3}\cdot\text{mol}\) Ag, \(\alpha_1<\alpha_2\) \(\Delta\rho/C\) Cu \(\alpha_1+\alpha_2\), \(\text{cm}^{-3}\cdot\text{mol}\) Cu, \(\alpha_1>\alpha_2\)
Ag Face-centered cubic 0,38 — 196 — — — — —
Au Face-centered cubic — — — 0,38 — 196 0,55 238
Pd Face-centered cubic 0,41 — 206 0,44 — 304 0,89 248
Cu Face-centered cubic 0,48 — 238 0,68 — 336 — —
Ni Face-centered cubic 1,00 — 247 — — — — —
Pt Face-centered cubic — — — — — — 2,15 250
Ir Face-centered cubic — — — — — — 5,1 256
Mn Simple cubic 2,41 — [[unclear: 2?2]] — — — 2,83 278
Rh Simple cubic 4,2 — 215 — — — 4,40 257
Sn Diamond type 3,63 150 — 4,32 159 — 2,86 201
Ge Diamond type 5,2 163 — 5,5 163 — 3,75 215
Cd Hexagonal 0,64 175 — 0,38 175 — 0,21 217
Ti Hexagonal 14,4 192 — — — — — —
Zn Hexagonal 0,96 — 203 0,62 203 — 0,30 245
Co Hexagonal 6,1 — 296 — — — — —
Te Hexagonal — — — 2,2 222 — — —
Sb Arsenic type — — — 7,26 153 — 5,45 195
As Arsenic type — — — 8,46 160 — 6,8 202

Table 6

Comparison of the linear expansion coefficient \(b\) of copper and gold alloys with the quantity \(\alpha_1+\alpha_2\)

Impurities (3%) in copper Impurities (3%) in copper Impurities (3%) in copper Impurities (10%) in gold Impurities (10%) in gold
Sb Si Zn Ag Cu
\(b \cdot 10^6\ \mathrm{deg}^{-1}\) 18,0 17,9 17,7 14,5 14,2
\(\alpha_1+\alpha_2\ \mathrm{cm}^{-3}\ \mathrm{mol}\) 195 201 245 196 203

Table 7

Comparison of the Brinell hardness of copper and gold alloys with the quantity \(\alpha_1+\alpha_2\)

Crystal Impurity % impurity \(H_B\) hardness \(\alpha_1+\alpha_2\), \(\mathrm{cm}^{-3}\ \mathrm{mol}\)
Cu Ni 10 62 289
Cu Au 10 45 238
Cu Sn 10 40 201
Au Cu 10 70 238
Au Ag 10 25 196

Table 7 shows a comparison of the Brinell hardness [16] of copper and gold alloys with the quantity \(\alpha_1+\alpha_2\). From Table 7 there follows an increase in Brinell hardness with increasing molecular concentration.

The change in the properties of crystals upon the introduction of impurities into them is explained by distortion of the crystal lattice. It is useful to compare the magnitude of the distortion with the molecular concentration of the alloys. From Table 8 it follows that the static distortions of the crystal lattice of solid solutions of nickel [17] decrease with increasing molecular concentration \(\alpha_1+\alpha_2\).

Table 8

Comparison of static distortions of the crystal lattice of nickel solid solutions with molecular concentration

Components of the solid solution Components of the solid solution % of second component Magnitude of static distortions \(\sqrt{\overline{U_{\mathrm{st}}^2}}\ \text{Å}\) Molecular concentration, \(\mathrm{cm}^{-3}\ \mathrm{mol}\)
I II
Ni Cr 10 0,053 282
Ni Al 10 0,057 249
Ni Ti 10 0,090 243

Thus, the molecular concentration \(\alpha\) may be regarded as a quantity characterizing many electrical, thermal, mechanical, and other properties of alloys. With increasing molecular concentration, the electric strength of crystals increases, electrical losses decrease, the coefficient of linear expansion of crystals decreases, and the Brinell hardness increases.

References

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  2. Bogoroditskii N. P. Dielectric losses in radioceramics. Reports of the Scientific-Technical Conference on Radioceramics. Leningrad Electrotechnical Institute named after V. I. Ulyanov (Lenin), 1955.

  3. Rovinskii B. M. On the dependence of the mechanical properties of solids on atomic interaction in the lattice. Izv. AN SSSR OTN No. 9, 55, 1955.

  4. Sirota N. N. On the physical properties of solid solutions and compounds in connection with the energy of interaction of the components. Izv. Sector of Physico-Chemical Analysis, 21, 90, 1952.

  5. Lindemann F. A. On the calculation of the natural frequency of molecular vibrations. Phys. Z., 11, 609, 1910.

  6. Savintsev P. A. On the question of the relationship between the electrical strength of crystals and their surface energy. Izvestiya TPI, 91, 199, 1956.

  7. Trubitsyn A. M. Electrical strength of single crystals of solid solutions of alkali-halide salts with a substituted halide. Izv. Tomsk Polytechnic Institute, 91, 119, 1956.

  8. Kislina A. N. Relationship of the electrical strength of single crystals of solid solutions of alkali-halide salts with certain physicochemical properties. Izv. Tomsk Polytechnic Institute, 91, 125, 1956.

  9. Ivankina M. S. and Gorodetskii A. F. Electrical strength of solid solutions of a system. Izv. Tomsk Polytechnic Institute, 91, 159, 1956.

  10. Avgustinik A. I. and Antselevich N. S. Electrical properties of solid solutions in the systems zirconium dioxide—magnesium oxide and zirconium dioxide—calcium oxide. ZhFKh, 27, No. 7, 973, 1953.

  11. Volod'yanov K. A. and Galibina G. I. Dielectric losses in crystals at high frequency. Izv. Tomsk Polytechnic Institute, 91, 269, 1956.

  12. Johanson C. H. and Linde J. O. Lattice structure and electrical conductivity of mixed crystals. Z. Metallkunde, 17, 213, 1925.

  13. Collection of Physical Constants, edited by Ya. G. Dorfman and S. E. Frish. ONTI, 1937.

  14. Technical Encyclopedia. Handbook of Physical, Chemical, and Technological Quantities, 2, 1929.

  15. Encyclopedia of Metallophysics, edited by G. Mazing, 1, 1937. ONTI.

  16. Kuznetsov V. D. Physics of the Solid State, Vol. 2, Tomsk, Krasnoe Znamya Publishing House, 1941.

  17. Kurdyumov G. V. and Travina N. T. X-ray study of interatomic interaction in nickel-based solid solutions. DAN SSSR, 99, No. 1, 77, 1954.

ERRATA

Page Line Printed Should read
3 11 from bottom \(10^{16}\) \(10^{-6}\)
9 9 from top \(5\cdot 10^{-9}\) sec \(5\cdot 10^{-9}\) sec
11 1 from top \(2 \div 3 \cdot 10_{8}^{-}\) sec \(2 \div 3 \cdot 10^{-8}\) sec
29 6 from bottom \(10^{-6}\) cm/sec \(10^{6}\) cm/sec
29 2 from bottom large large
30 3 from top \(10^{6}\) sec \(10^{-6}\) sec
32 6 from bottom solderability solderability
33 17 from top \(10^{-}\) sec \(10^{-8}\) sec
34 3 from top \(10^{6}\) sec \(10^{-6}\) sec
34 4–5 from top \(10^{-4}\ldots 10^{-}\) sec \(10^{-4}\ldots 10^{-1}\) sec
34 19 from top \(10^{-8}\) and \(10^{-6}\) cm/sec \(10^{-8}\) sec and \(10^{6}\) cm/sec
56 formula 9 At the end of the curly bracket there should be \(-1\). At the end of the curly bracket there should be \(-1\).
65 3 from bottom formula form
91 5 from top \(1350\ \Omega\) and \(R_{\mathrm{T}} = 30\ \mathrm{k}\Omega\) \(R_{\mathrm{T}} = 1350\ \Omega,\ R_{\mathrm{T}}\ldots 30\ \mathrm{k}\Omega\)
107 6 from top \(\tau = 10^{-}\) sec \(\tau = 10^{-6}\) sec
108 16 from bottom specimens microhardness of specimens
111 4 from bottom \(E\) \(E_{\mathrm{pr}}\)
112 Fig. 9, 5 from top the field is homogeneous the field is inhomogeneous
113 12 from bottom Winschell Winschell
123 7 from top solderability solderability
128 22 from top 40 mol % 40 mol %
170 1 from bottom angensa tangent
217 15 from bottom When introducing impurities of the incorporation type When introducing impurities into solid solutions of the incorporation type
218 24 from top The dependence was measured The dependence was determined
219 8 from top rubidium chloride potassium bromide
219 22 from bottom storage from single crystals storage of single crystals
220 Fig. 2 At the coordinate origin, along the \(\lg \sigma\) axis one should put \(-12\) At the coordinate origin, along the \(\lg \sigma\) axis one should put \(-12\)
228 1 from bottom expression expression
228 5 from top then then
228 6 from top arphora phosphorus
228 7 from top framework in the framework
228 8 from top detailed detailed
228 16 from bottom coils coils
228 formula 3 \(C_g\) \(C_g\)
242 2 from bottom From Fig. 1 From the melting diagram
244 11–12 from bottom X-ray patterns are shifted X-ray patterns of the alloy are shifted
251 24 from top with ionized with ionized
301 7 from bottom ionizing ionizing
302 18 from bottom -percent 50-percent
306 9 from bottom 95% of a single crystal 95% of the density of a single crystal
325 24 from top group group II
332 6 from bottom \(10^{7}—10^{8}\ \Omega\cdot\)sec \(10^{7}—10^{8}\) cm/sec
343 1 from bottom “438–1” “IZV–1”
394 8 from bottom Co Co--

Izv. TPI, vol. 95.

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Physicochemical Properties of Solid Solutions and Molecular Concentration